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Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures
Article
Creator
Masatomo Sumiya SAMURAI ORCID ; Yasutaka Imanaka SAMURAI ORCID ; Yoshitaka Nakano
Keyword
AlGaN/GaN heterostructure, two-dimensional electron gas
Date published
2025-09-08
Updated at
2025-09-17 16:30:34 +0900