Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

論文

著者

Takahiro Nagata ; Asahiko Matsuda ; Takashi Teramoto ; Dominic Gerlach ; Peng Shen ; Shigenori Ueda ; Takako Kimura ; Christian Dussarrat ; Toyohiro Chikyow

キーワード

gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination

刊行年月日

2025-03-07

更新時刻

2025-03-26 17:26:31 +0900