2 件のレコードが見つかりました。 1件目から2件目まで表示します。
Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layers
- ジャーナル論文
- 著者
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Takashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
- キーワード
- atomic layer deposition, ferroelectric HfO2-based thin films, memory devices, interface engineering, crystal phase control
- 刊行年月日
- 2026-04-30
- 更新時刻
- 2026-07-13 17:01:06 +0900
Effects of oxidant selection for atomic layer deposition on impurity removal and crystallinity of as-grown Hf1− x Zr x O2 thin films
- ジャーナル論文
- 著者
-
;Haoming Che (author) (この著者で検索)Takashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
;
;Atsushi Tamura (author) (この著者で検索);Masaki Ishii (author) (この著者で検索);Hiroshi Taka (author) (この著者で検索)Koji Kita (author) (この著者で検索)
- キーワード
- atomic layer deposition, ferroelectric HfO2-based thin films, oxidant, low temperature fabrication process
- 刊行年月日
- 2026-05-01
- 更新時刻
- 2026-07-14 10:27:45 +0900