Plasma-free anisotropic selective-area etching of β-Ga ₂ O ₃ using forming gas under atmospheric pressure

Article

Creator

Takayoshi Oshima ; Rie Togashi ; Yuichi Oshima

Keyword

Ga2O3, forming gas, anisotropic etching, plasma-free process

Date published

2024-12-31

Updated at

2024-07-31 12:30:20 +0900