2 records found.
Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation
- Journal article
- Creator
-
Zhao Ma (author) (Search by this author)
;
Takaaki Mano (author) (Search by this author)
;
Akihiro Ohtake (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
- Keyword
- GaAs, Surface, Termination, Oxide, Arsenic
- Date published
- 2025-06-28
- Updated at
- 2025-06-27 16:30:25 +0900
Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination
- Journal article
- Creator
-
Zhao Ma (author) (Search by this author)
;
Takaaki Mano (author) (Search by this author)
;
Akihiro Ohtake (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
- Keyword
- Sulfur, Termination, Oxide, Photoluminescence, GaAs
- Date published
- 2024-12-02
- Updated at
- 2025-02-06 12:31:18 +0900