2 records found.
Effectiveness of fluorine termination at nitrogen vacancies inside gallium nitride crystals based on first-principles calculations
- Journal article
- Creator
-
Yuki Fujishiro (author) (Search by this author)
https://orcid.org/0009-0006-7436-2911
(unauthenticated)
;
Tomoe Yayama (author) (Search by this author)
https://orcid.org/0000-0002-5708-8723
(unauthenticated)
;
Takahiro Nagata (author) (Search by this author)
;
Toyohiro Chikyow (author) (Search by this author)
;
Fumiko Akagi (author) (Search by this author)
https://orcid.org/0000-0003-4934-8465
(unauthenticated)
- Keyword
- Gallium nitride, First-principles calculations, Fluorine termination, Nitrogen vacancies
- Date published
- 2026-02-28
- Updated at
- 2026-04-03 10:13:47 +0900
NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy
- Journal article
- Creator
-
Asahiko Matsuda (author) (Search by this author)National Institute for Materials Science
;
Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Takahiro Nagata (author) (Search by this author)National Institute for Materials Science
;
Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)National Institute for Materials Science
;
;Takako Kimura (author) (Search by this author);Christian Dussarrat (author) (Search by this author)Toyohiro Chikyow (author) (Search by this author)
- Keyword
- Fluorination, Surface passivation, hard X-ray photoelectron spectroscopy, Gallium nitride
- Date published
- 2024-03-19
- Updated at
- 2026-03-19 14:27:24 +0900