Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination

Article

Creator

Zhao Ma ; Takaaki Mano ; Akihiro Ohtake ; Takashi Kuroda

Keyword

GaAs , Sulfur, Termination, Oxide, Photoluminescence

Date published

2024-12-02

Updated at

2025-02-06 12:31:18 +0900