Pt/GaN Schottky barrier height lowering by incorporated hydrogen

ジャーナル論文

著者

色川 芳宏 (author) (この著者で検索)

https://orcid.org/0000-0002-6531-4356

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group

NIMS Researchers Directory SAMURAI

色川 芳宏 ;

大井 暁彦 (author) (この著者で検索)

https://orcid.org/0000-0003-4638-0099

National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit

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大井 暁彦 ;

生田目 俊秀 (author) (この著者で検索)

https://orcid.org/0000-0002-5973-0230

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group

NIMS Researchers Directory SAMURAI

生田目 俊秀 ;

小出 康夫 (author) (この著者で検索)

https://orcid.org/0000-0001-8321-9822

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group

NIMS Researchers Directory SAMURAI

小出 康夫

キーワード

GaN, hydrogen, Schottky barrier height

刊行年月日

2024-04-01

更新時刻

2024-04-10 16:30:21 +0900