Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Journal article

Creator

Takayoshi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8550-9735

Research Center for Electronic and Optical Materials, National Institute for Materials Science

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Takayoshi Oshima ;

Yuichi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8293-4891

Research Center for Electronic and Optical Materials, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yuichi Oshima

Keyword

Ga2O3, (-102), selective area growth, selective area etching

Date published

2024-01-22

Updated at

2025-01-25 12:30:12 +0900