- negative differential resistance (2)
- 2D TMD semiconductors (1)
- N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) (1)
- aluminum oxide (Al2O3) (1)
- gate-tunable junctions (1)
- multi-valued logic (1)
- organic field-effect transistor (1)
- organic semiconductor (1)
- silicon dioxide (SiO2) (1)
- ternary inverter (1)
2 records found.
Room Temperature Negative Differential Resistance with High Peak Current in MoS2/WSe2 Heterostructures
- Journal article
- Creator
-
;Jung Ho Kim (author) (Search by this author);Soumya Sarkar (author) (Search by this author);Yan Wang (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Manish Chhowalla (author) (Search by this author) - Keyword
- 2D TMD semiconductors, gate-tunable junctions, negative differential resistance
- Date published
- 2024-02-28
- Updated at
- 2025-02-14 16:30:51 +0900
[Research Highlights Vol.42] Flexible Organic Electronic Devices for Three-Valued Logic Circuitry
- Magazine
- Collection
- Research Highlights
- Creator
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- organic semiconductor, organic field-effect transistor, negative differential resistance, ternary inverter, multi-valued logic, α-sexithiophene (α-6T), N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8), silicon dioxide (SiO2), aluminum oxide (Al2O3)
- Date published
- 2018-09-29
- Updated at
- 2023-12-25 00:30:22 +0900