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説明:

Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS2 and WSe2 using van der Waals (vdW) contacts. The p-n junction shows negative differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the triangular barrier formed by applying a global back-gate bias (VGS). We also show that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel barrier between MoS2 and WSe2 leads to the formation of sharp band edges and unintentional inelastic tunneling current. The devices based on vdW contacts, global VGS, and h-BN tunnel barriers exhibit NDR with a peak current (Ipeak) of 315 µA, suggesting that the approach may be useful for applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: 2D TMD semiconductors, gate-tunable junctions, negative differential resistance

刊行年月日: 2024-02-28

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 24 issue. 8 p. 2561-2566

研究助成金:

• Engineering and Physical Sciences Research Council EP/T001038/1
• Ministry of Education, Culture, Sports, Science and Technology
• Japan Society for the Promotion of Science 21H05233
• Engineering and Physical Sciences Research Council EP/T026200/1
• Japan Society for the Promotion of Science 23H02052
• H2020 European Research Council GA 101019828-2D-LOTTO

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.3c04607

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更新時刻: 2025-02-14 16:30:51 +0900

MDRでの公開時刻: 2025-02-14 16:30:51 +0900