Origin of Mobility Reduction in Thin a-IGZO TFTs and Its Improvement
- Journal article
- Creator
-
Hanjun Cho (author) (Search by this author)
https://orcid.org/0009-0009-2834-8846
(unauthenticated)
;
Masatake Tsuji (author) (Search by this author)
https://orcid.org/0000-0002-3404-6037
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)
;
Hideo Hosono (author) (Search by this author)
- Keyword
- a-IGZO, mobility, TFT, surface defects
- Date published
- 2026-05-22
- Updated at
- 2026-08-25 14:17:04 +0900
[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
- Magazine
- Collection
- Research Highlights
- Creator
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN
- Date published
- 2022-07-29
- Updated at
- 2023-12-26 21:47:16 +0900