Observation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

Journal article

Creator

Jun Uzuhashi (author) (Search by this author)

https://orcid.org/0000-0003-2023-8158

NIMS Researchers Directory SAMURAI

Jun Uzuhashi ;

Yoshihiro Irokawa (author) (Search by this author)

https://orcid.org/0000-0002-6531-4356

NIMS Researchers Directory SAMURAI

Yoshihiro Irokawa ;

Toshihide Nabatame (author) (Search by this author)

https://orcid.org/0000-0002-5973-0230

NIMS Researchers Directory SAMURAI

Toshihide Nabatame ;

Tadakatsu Ohkubo (author) (Search by this author)

https://orcid.org/0000-0003-3548-1951

NIMS Researchers Directory SAMURAI

Tadakatsu Ohkubo ;

Yasuo Koide (author) (Search by this author)

Yasuo Koide

Keyword

transmission electron microscopy, metal-oxide-semiconductor

Date published

2025-08-01

Updated at

2025-08-26 11:15:20 +0900