2 records found.
Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms
- Journal article
- Creator
-
Takashi Tsuchiya (author) (Search by this author)
;
Daiki Nishioka (author) (Search by this author)
;
Wataru Namiki (author) (Search by this author)
;
Kazuya Terabe (author) (Search by this author)
- Keyword
- reservoir computing, ion-gating reservoir, solid state ionics, ion-gating transistor
- Date published
- 2024-11-20
- Updated at
- 2024-12-13 12:30:51 +0900
Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing
- Journal article
- Creator
-
Takashi Tsuchiya (author) (Search by this author)National Institute for Materials Science
;
Makoto Takayanagi (author) (Search by this author)
https://orcid.org/0000-0001-7788-5378
(unauthenticated)
National Institute for Materials Science
;
Daiki Nishioka (author) (Search by this author)National Institute for Materials Science
;
Wataru Namiki (author) (Search by this author)National Institute for Materials Science
;
Kazuya Terabe (author) (Search by this author)National Institute for Materials Science
- Keyword
- electric double layer effect, solid electrolyte, neuromorphic computing, reservoir computing, ion-gating transistor
- Date published
- 2024-05-28
- Updated at
- 2025-05-28 08:30:24 +0900