論文 Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing

Takashi Tsuchiya SAMURAI ORCID (National Institute for Materials ScienceROR) ; Makoto Takayanagi ORCID (National Institute for Materials Science) ; Daiki Nishioka SAMURAI ORCID (National Institute for Materials ScienceROR) ; Wataru Namiki SAMURAI ORCID (National Institute for Materials ScienceROR) ; Kazuya Terabe SAMURAI ORCID (National Institute for Materials ScienceROR)

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引用
Takashi Tsuchiya, Makoto Takayanagi, Daiki Nishioka, Wataru Namiki, Kazuya Terabe. Electric double layer effect in the vicinity of solid electrolyte/diamond interfaces and the application to neuromorphic computing. Journal of Solid State Electrochemistry. 2024, 28 (12), 4367-4376. https://doi.org/10.1007/s10008-024-05937-z

説明:

(abstract)

Electric double layer effect in solid electrochemical systems is a key topic in energy storage applications. In this review, we outline recent investigations on the electric double layer effect of solid electrolyte interfaces by utilizing a semiconducting diamond surface as a probe of electrical charges at the solid/solid interfaces. Hall measurements with various solid electrolyte based transistors evidenced that the electric double-layer effect strongly depends on the properties of the electrolyte and the very thin region from the interface. The unveiled features of the electric double layer at solid electrolyte interfaces are quantitatively discussed from the viewpoint of charge density and charging-discharging rate. Furthermore, applications of the unique switching response of the electric double layer transistors to neuromorphic computing are also demonstrated.

権利情報:

  • In Copyright

    This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s10008-024-05937-z

キーワード: electric double layer effect, solid electrolyte, neuromorphic computing, reservoir computing, ion-gating transistor

刊行年月日: 2024-05-28

出版者: Springer Science and Business Media LLC

掲載誌:

  • Journal of Solid State Electrochemistry (ISSN: 14328488) vol. 28 issue. 12 p. 4367-4376

研究助成金:

  • Japan Society for the Promotion of Science JP22H04625
  • Japan Society for the Promotion of Science JP22KJ2799
  • Precursory Research for Embryonic Science and Technology JPMJPR23H4
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5072
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5236
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5237

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4998

公開URL: https://doi.org/10.1007/s10008-024-05937-z

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更新時刻: 2025-05-28 08:30:24 +0900

MDRでの公開時刻: 2025-05-28 08:19:33 +0900

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