Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Journal article

Creator

Masatomo Sumiya (author) (Search by this author)

https://orcid.org/0000-0003-0960-3812

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Masatomo Sumiya ;

Osamu Goto (author) (Search by this author)

Osamu Goto ;

Yuki Takahara (author) (Search by this author)

Yuki Takahara ;

Yasutaka Imanaka (author) (Search by this author)

https://orcid.org/0000-0003-2804-4438

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yasutaka Imanaka ;

Liwen Sang (author) (Search by this author)

https://orcid.org/0000-0003-0946-1025

National Institute for Materials Science

Liwen Sang ;

Noboru Fukuhara (author) (Search by this author)

Noboru Fukuhara ;

Taichiro Konno (author) (Search by this author)

Taichiro Konno ;

Fumimasa Horikiri (author) (Search by this author)

Fumimasa Horikiri ;

Takeshi Kimura (author) (Search by this author)

Takeshi Kimura ;

Akira Uedono (author) (Search by this author)

Akira Uedono ;

Hajime Fujikura (author) (Search by this author)

Hajime Fujikura

Keyword

HEMT, III-V nitride semiconductor, heterointerface

Date published

2023-08-01

Updated at

2024-12-10 16:56:26 +0900