Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Journal article

Creator

Yuhua Tsai (author) (Search by this author)

https://orcid.org/0000-0001-7996-6681

National Institute for Materials Science

Yuhua Tsai ;

Masaaki Kobata (author) (Search by this author)

https://orcid.org/0000-0002-9710-6308 (unauthenticated)

Masaaki Kobata ;

Tatsuo Fukuda (author) (Search by this author)

https://orcid.org/0000-0002-4832-5862 (unauthenticated)

Tatsuo Fukuda ;

Hajime Tanida (author) (Search by this author)

https://orcid.org/0009-0002-8468-7315 (unauthenticated)

Hajime Tanida ;

Toru Kobayashi (author) (Search by this author)

Toru Kobayashi ;

Yoshiyuki Yamashita (author) (Search by this author)

https://orcid.org/0000-0003-0994-8095

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yoshiyuki Yamashita

Keyword

Ga2O3, dopant, b-Ga2O3

Date published

2024-03-11

Updated at

2024-03-19 12:30:20 +0900