Step-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

Journal article

Creator

Takayoshi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8550-9735

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Takayoshi Oshima

Keyword

Ga2O3, TMAH, Wet etching

Date published

2025-08-01

Updated at

2025-08-18 16:30:36 +0900