All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Journal article

Creator

Keigo Nakamura (author) (Search by this author)

Keigo Nakamura ;

Naoka Nagamura (author) (Search by this author)

https://orcid.org/0000-0002-7697-8983

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Naoka Nagamura ;

Keiji Ueno (author) (Search by this author)

Keiji Ueno ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

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Kenji Watanabe ;

Kosuke Nagashio (author) (Search by this author)

Kosuke Nagashio

Keyword

All 2D heterostructure devices, Band to band tunneling, Negative differential resistance, Subthreshold swing, Type III band alignment

Date published

2020-11-18

Updated at

2024-12-10 16:56:20 +0900