Pt/GaN Schottky barrier height lowering by incorporated hydrogen

Journal article

Creator

色川 芳宏 (author) (Search by this author)

https://orcid.org/0000-0002-6531-4356

Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science

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色川 芳宏 ;

大井 暁彦 (author) (Search by this author)

https://orcid.org/0000-0003-4638-0099

Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit, National Institute for Materials Science

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大井 暁彦 ;

生田目 俊秀 (author) (Search by this author)

https://orcid.org/0000-0002-5973-0230

Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science

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生田目 俊秀 ;

小出 康夫 (author) (Search by this author)

https://orcid.org/0000-0001-8321-9822

Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science

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小出 康夫

Keyword

GaN, hydrogen, Schottky barrier height

Date published

2024-04-01

Updated at

2024-04-10 16:30:21 +0900