2 records found.
Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics
- Journal article
- Creator
-
;Zhongyunshen Zhu (author) (Search by this author);Hridibrata Pal (author) (Search by this author);Aditya Dev Varma (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
;Hironori Okumura (author) (Search by this author)Tomás Palacios (author) (Search by this author) - Keyword
- AlN, Zr-based ohmic contact, High-Temperature Electronics, High-temperature electronics, Schottky barrier diode
- Date published
- 2026-04-20
- Updated at
- 2026-06-19 13:22:46 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Journal article
- Creator
-
;Hironori Okumura (author) (Search by this author);Yohei Ogawara (author) (Search by this author);Manabu Togawa (author) (Search by this author);Masaya Miyahara (author) (Search by this author);Tadaaki Isobe (author) (Search by this author);Kosuke Itabashi (author) (Search by this author);Jiro Nishinaga (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
- Keyword
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900