Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

Journal article

Creator

Jiangwei Liu (author) (Search by this author)

https://orcid.org/0000-0003-2580-7401

National Institute for Materials Science

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Jiangwei Liu ;

Tokuyuki Teraji (author) (Search by this author)

https://orcid.org/0000-0002-7731-0547

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Tokuyuki Teraji ;

Bo Da (author) (Search by this author)

https://orcid.org/0000-0002-0785-8662

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Bo Da ;

Yasuo Koide (author) (Search by this author)

https://orcid.org/0000-0001-8321-9822

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yasuo Koide

Keyword

Boron-doped diamond, MOS capacitor, MOSFET

Date published

2023-03-16

Updated at

2024-01-05 22:13:56 +0900