In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Journal article

Creator

Akihiro Shimada (author) (Search by this author)

Akihiro Shimada ;

Haruna Shiomi (author) (Search by this author)

Haruna Shiomi ;

Tetsuya Tohei (author) (Search by this author)

https://orcid.org/0000-0002-4113-2566 (unauthenticated)

Tetsuya Tohei ;

Yusuke Hayashi (author) (Search by this author)

https://orcid.org/0000-0001-5672-1497

NIMS Researchers Directory SAMURAI

Yusuke Hayashi ;

Masaya Yamaguchi (author) (Search by this author)

Masaya Yamaguchi ;

Junpei Yamamoto (author) (Search by this author)

https://orcid.org/0009-0007-5684-0569 (unauthenticated)

Junpei Yamamoto ;

Takeaki Hamachi (author) (Search by this author)

https://orcid.org/0000-0002-0631-1729 (unauthenticated)

Takeaki Hamachi ;

Yasuhiko Imai (author) (Search by this author)

https://orcid.org/0000-0003-4686-2629 (unauthenticated)

Yasuhiko Imai ;

Kazushi Sumitani (author) (Search by this author)

Kazushi Sumitani ;

Shigeru Kimura (author) (Search by this author)

https://orcid.org/0000-0003-1064-7572 (unauthenticated)

Shigeru Kimura ;

Shota Kaneki (author) (Search by this author)

https://orcid.org/0000-0003-0806-8571 (unauthenticated)

Shota Kaneki ;

Tamotsu Hashizume (author) (Search by this author)

https://orcid.org/0009-0004-8229-9460 (unauthenticated)

Tamotsu Hashizume ;

Akira Sakai (author) (Search by this author)

https://orcid.org/0000-0002-0654-504X (unauthenticated)

Akira Sakai

Keyword

GaN, HEMT, Strain, In situ

Date published

2025-08-21

Updated at

2025-08-23 08:30:23 +0900