Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

Journal article

Creator

Taiki Hirahara (author) (Search by this author)

Hiroshima University

Taiki Hirahara ;

Ryoya Ebisuoka (author) (Search by this author)

Hiroshima University

Ryoya Ebisuoka ;

Takushi Oka (author) (Search by this author)

Hiroshima University

Takushi Oka ;

Tomoaki Nakasuga (author) (Search by this author)

Hiroshima University

Tomoaki Nakasuga ;

Shingo Tajima (author) (Search by this author)

Hiroshima University

Shingo Tajima ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

Research Center for Functional Materials/Electric and Electronic Materials Field/Electroceramics Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

Research Center for Functional Materials/Exploring Function Field/High Pressure Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Ryuta Yagi (author) (Search by this author)

Hiroshima University

Ryuta Yagi

Keyword

Gate-tunable resistance, multilayer graphene, quantum oscillations

Date published

2018-09-18

Updated at

2025-02-23 22:50:43 +0900