Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

Taiki Hirahara; Ryoya Ebisuoka; Takushi Oka; Tomoaki Nakasuga; Shingo Tajima; Kenji Watanabe; Takashi Taniguchi; Ryuta Yagi

doi:10.1038/s41598-018-32214-7

論文 Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

Taiki Hirahara (Hiroshima University) ; Ryoya Ebisuoka (Hiroshima University) ; Takushi Oka (Hiroshima University) ; Tomoaki Nakasuga (Hiroshima University) ; Shingo Tajima (Hiroshima University) ; Kenji Watanabe (Research Center for Functional Materials/Electric and Electronic Materials Field/Electroceramics Group, National Institute for Materials Science) ; Takashi Taniguchi (Research Center for Functional Materials/Exploring Function Field/High Pressure Group, National Institute for Materials Science) ; Ryuta Yagi (Hiroshima University)

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Taiki Hirahara, Ryoya Ebisuoka, Takushi Oka, Tomoaki Nakasuga, Shingo Tajima, Kenji Watanabe, Takashi Taniguchi, Ryuta Yagi. Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence. SCIENTIFIC REPORTS. 2018, 8 (), . https://doi.org/10.1038/s41598-018-32214-7

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(abstract)

We show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices.

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