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Description:

We show a new aspect of multilayer graphene. We found that four-layer graphene shows intrinsic peak structures in the gate voltage dependence of its resistance at zero magnetic field. Measurement of quantum oscillations in magnetic field confirmed that the peaks originate from the specific band structure of graphene and appear at the carrier density for the bottoms of conduction bands and valence bands. The intrinsic peak structures should generally be observed in AB-stacked multilayer graphene. The present results would be significant for understanding the physics of graphene and making graphene FET devices.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Gate-tunable resistance, multilayer graphene, quantum oscillations

Date published: 2018-09-18

Publisher: Springer Science and Business Media LLC

Journal:

• SCIENTIFIC REPORTS (ISSN: 20452322) vol. 8

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41598-018-32214-7

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Updated at: 2025-02-23 22:50:43 +0900

Published on MDR: 2025-02-23 22:50:43 +0900