Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination

Journal article

Creator

Zhao Ma (author) (Search by this author)

https://orcid.org/0000-0003-0151-8592

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Zhao Ma ;

Takaaki Mano (author) (Search by this author)

https://orcid.org/0000-0002-6955-260X

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Takaaki Mano ;

Akihiro Ohtake (author) (Search by this author)

https://orcid.org/0000-0002-3519-4613

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Akihiro Ohtake ;

Takashi Kuroda (author) (Search by this author)

https://orcid.org/0000-0001-6445-7673

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Takashi Kuroda

Keyword

Sulfur, Termination, Oxide, Photoluminescence, GaAs

Date published

2024-12-02

Updated at

2025-02-06 12:31:18 +0900