Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

Journal article

Creator

Takahiro Nagata (author) (Search by this author)

https://orcid.org/0000-0002-8591-2943

NIMS Researchers Directory SAMURAI

Takahiro Nagata ;

Asahiko Matsuda (author) (Search by this author)

https://orcid.org/0000-0001-5989-027X

NIMS Researchers Directory SAMURAI

Asahiko Matsuda ;

Takashi Teramoto (author) (Search by this author)

https://orcid.org/0000-0002-9368-1284 (unauthenticated)

Takashi Teramoto ;

Dominic Gerlach (author) (Search by this author)

https://orcid.org/0000-0003-1859-0750 (unauthenticated)

Dominic Gerlach ;

Peng Shen (author) (Search by this author)

https://orcid.org/0000-0002-1971-5490 (unauthenticated)

Peng Shen ;

Shigenori Ueda (author) (Search by this author)

https://orcid.org/0000-0001-9425-0614

NIMS Researchers Directory SAMURAI

Shigenori Ueda ;

Takako Kimura (author) (Search by this author)

https://orcid.org/0009-0007-0109-4482 (unauthenticated)

Takako Kimura ;

Christian Dussarrat (author) (Search by this author)

https://orcid.org/0009-0000-1063-6473 (unauthenticated)

Christian Dussarrat ;

Toyohiro Chikyow (author) (Search by this author)

https://orcid.org/0000-0003-3860-4806

NIMS Researchers Directory SAMURAI

Toyohiro Chikyow

Keyword

gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination

Date published

2025-03-07

Updated at

2025-03-26 17:26:31 +0900