Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er₂O₃ Dielectrics on Two-Dimensional MoS₂ Field-Effect Transistors

Journal article

Creator

Shuhong Li (author) (Search by this author)

Shuhong Li ;

Ryotaro Otake (author) (Search by this author)

Ryotaro Otake ;

Tomonori Nishimura (author) (Search by this author)

Tomonori Nishimura ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takashi Taniguchi ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kenji Watanabe ;

Yoshiki Sakuma (author) (Search by this author)

https://orcid.org/0000-0001-6804-7217

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yoshiki Sakuma ;

Kosuke Nagashio (author) (Search by this author)

Kosuke Nagashio

Keyword

High-κ dielectric, MoS2, 2D semiconductor

Date published

2025-05-05

Updated at

2026-07-29 11:45:27 +0900