Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

ジャーナル論文

著者

Jun Uzuhashi (author) (この著者で検索)

https://orcid.org/0000-0003-2023-8158

National Institute for Materials Science Research Center for Magnetic and Spintronic Materials/Administrative Office

NIMS Researchers Directory SAMURAI

Jun Uzuhashi ;

Jun Chen (author) (この著者で検索)

https://orcid.org/0000-0003-4272-2653

National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group

NIMS Researchers Directory SAMURAI

Jun Chen ;

Ryo Tanaka (author) (この著者で検索)

Fuji Electric Corporation

Ryo Tanaka ;

Shinya Takashima (author) (この著者で検索)

Fuji Electric Corporation

Shinya Takashima ;

Masaharu Edo (author) (この著者で検索)

Fuji Electric Corporation

Masaharu Edo ;

Tadakatsu Ohkubo (author) (この著者で検索)

https://orcid.org/0000-0003-3548-1951

National Institute for Materials Science Research Center for Magnetic and Spintronic Materials

NIMS Researchers Directory SAMURAI

Tadakatsu Ohkubo ;

Takashi Sekiguchi (author) (この著者で検索)

University of Tsukuba

Takashi Sekiguchi

キーワード

gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence

刊行年月日

2024-08-07

更新時刻

2024-08-03 08:30:15 +0900