High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

ジャーナル論文

著者

Rahmat Hadi Saputro (author) (この著者で検索)

https://orcid.org/0000-0001-7035-1680

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group

NIMS Researchers Directory SAMURAI

Rahmat Hadi Saputro ;

Tatsuro Maeda (author) (この著者で検索)

AIST

Tatsuro Maeda ;

Kaoru Toko (author) (この著者で検索)

Graduate School of Pure and Applied Sciences University of Tsukuba

Kaoru Toko ;

Ryo Matsumura (author) (この著者で検索)

https://orcid.org/0000-0003-2303-4978

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group

NIMS Researchers Directory SAMURAI

Ryo Matsumura ;

Naoki Fukata (author) (この著者で検索)

https://orcid.org/0000-0002-0986-8485

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)

NIMS Researchers Directory SAMURAI

Naoki Fukata

キーワード

germanium, thin film, polycrystalline growth, laser annealing, impurity doping

刊行年月日

2024-06-25

更新時刻

2025-06-03 08:30:17 +0900