Huije Ryu
;
Seong Chul Hong
;
Kangwon Kim
;
Yeonjoon Jung
;
Yangjin Lee
;
Kihyun Lee
;
Youngbum Kim
;
Hyunjun Kim
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Jeongyong Kim
;
Kwanpyo Kim
;
Hyeonsik Cheong
;
Gwan-Hyoung Lee
説明:
(abstract)Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2,000 % enhancement of photoluminescence quantum yield (PLQY) and 1,000 % increase of prolonged lifetime after encapsulation annealing at 1000°C, which are attributed to dominant radiative recombination of excitons through dedoping of exfoliated monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 ¬changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
権利情報:
キーワード: Monolayer TMDs, optical properties, hBN-encapsulation
刊行年月日: 2024-02-26
出版者: Royal Society of Chemistry (RSC)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1039/d3nr06641j
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-15 12:30:34 +0900
MDRでの公開時刻: 2025-02-15 12:30:34 +0900
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d3nr06641j.pdf
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