Journal article Large Tunneling Magnetoresistance in Nonvolatile 2D Hybrid Spin Filters
Xiaoyu Wang (author) (Search by this author)
;
Lihao Zhang (author) (Search by this author)
;
Miao He (author) (Search by this author)
;
Qi Li (author) (Search by this author)
;
Wenqin Song (author) (Search by this author)
;
Kunlin Yang (author) (Search by this author)
;
Shuxi Wang (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Lei Zhang (author) (Search by this author)
;
Wu Shi (author) (Search by this author)
;
Yingchun Cheng (author) (Search by this author)
;
Zhe Qu (author) (Search by this author)
;
Jie Pan (author) (Search by this author)
;
Zhe Wang (author) (Search by this author)
Collection

Citation
Xiaoyu Wang, Lihao Zhang, Miao He, Qi Li, Wenqin Song, Kunlin Yang, Shuxi Wang, Takashi Taniguchi, Kenji Watanabe, Lei Zhang, Wu Shi, Yingchun Cheng, Zhe Qu, Jie Pan, Zhe Wang. Large Tunneling Magnetoresistance in Nonvolatile 2D Hybrid Spin Filters. Physical Review Letters. 2025, 134 (7), 077001. https://doi.org/10.1103/PhysRevLett.134.077001

Description:

(abstract)

Ferromagnetic semiconductors offer an efficient way to achieve high spin polarization via spin filtering effect. Large tunneling magnetoresistance (TMR) can then be realized when multiple spin filters are put in series, as recently demonstrated in van der Waals 2D A-type antiferromagnets such as CrI3 and CrSBr. However, the interlayer antiferromagnetic ground state of these magnets inherently results in a high resistance state at zero field, and this volatile behavior limits potential applications. Here we fabricate hybrid spin filters using 2D ferromagnetic metal Fe3⁢GeTe2 and semiconductor CrBr3, which are nonvolatile as two magnets are magnetically decoupled. We achieve large TMR of around 100%, with its temperature dependence well fitted by the extended Jullière model. Additionally, the devices allow spin injection tuned through bias voltage, and TMR polarity reversals are observed. Our work opens a new route to develop 2D magnetic semiconductor based spintronics.

Rights:

Keyword: Tunneling magnetoresistance (TMR), Spin filter, Van der Waals 2D magnet

Date published: 2025-02-19

Publisher: American Physical Society (APS)

Journal:

  • Physical Review Letters (ISSN: 10797114) vol. 134 issue. 7 077001

Funding:

  • National Natural Science Foundation of China 12374121
  • National Natural Science Foundation of China 12304232
  • National Natural Science Foundation of China 12274090
  • National Natural Science Foundation of China 62274087
  • National Natural Science Foundation of China 12374129
  • National Natural Science Foundation of China T2425029
  • National Natural Science Foundation of China 92265103
  • Fundamental Research Funds for the Central Universities
  • Major Science and Technology Projects in Anhui Province s202305a12020005
  • National Key Research and Development Program of China 2024YFB3600019
  • National Key Research and Development Program of China 2024YFA1400206
  • Shaanxi Fundamental Science Research Project for Mathematics and Physics 22JSY026
  • Shaanxi Fundamental Science Research Project for Mathematics and Physics 23JSQ011
  • World Premier International Research Center Initiative
  • Natural Science Foundation of Shanghai Municipality 22ZR1406300
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052
  • Ministry of Education, Culture, Sports, Science and Technology
  • Natural Science Foundation of Anhui Province 2408085J025

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1103/PhysRevLett.134.077001

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Updated at: 2026-07-06 11:03:39 +0900

Published on MDR: 2026-07-06 12:30:07 +0900

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