説明:
(abstract)Ferromagnetic semiconductors offer an efficient way to achieve high spin polarization via spin filtering effect. Large tunneling magnetoresistance (TMR) can then be realized when multiple spin filters are put in series, as recently demonstrated in van der Waals 2D A-type antiferromagnets such as CrI3 and CrSBr. However, the interlayer antiferromagnetic ground state of these magnets inherently results in a high resistance state at zero field, and this volatile behavior limits potential applications. Here we fabricate hybrid spin filters using 2D ferromagnetic metal Fe3GeTe2 and semiconductor CrBr3, which are nonvolatile as two magnets are magnetically decoupled. We achieve large TMR of around 100%, with its temperature dependence well fitted by the extended Jullière model. Additionally, the devices allow spin injection tuned through bias voltage, and TMR polarity reversals are observed. Our work opens a new route to develop 2D magnetic semiconductor based spintronics.
権利情報:
© 2025 American Physical Society
キーワード: Tunneling magnetoresistance (TMR), Spin filter, Van der Waals 2D magnet
刊行年月日: 2025-02-19
出版者: American Physical Society (APS)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI:
公開URL: https://doi.org/10.1103/PhysRevLett.134.077001
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-07-06 11:03:39 +0900
MDRでの公開時刻: 2026-07-06 12:30:07 +0900
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2025A00373G_Large Tunneling Magnetoresistance in Nonvolatile 2D Hybrid Spin Filters.pdf
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