Article Berry curvature induced intrinsic spin Hall effect in the light-element-based CrN system for magnetization switching

Gaurav K. Shukla ; Prabhat Kumar ORCID ; Shinji Isogami SAMURAI ORCID

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Citation
Gaurav K. Shukla, Prabhat Kumar, Shinji Isogami. Berry curvature induced intrinsic spin Hall effect in the light-element-based CrN system for magnetization switching. Physical Review B. 2025, 112 (3), 035166. https://doi.org/10.1103/rzhb-6ytx

Description:

(abstract)

The current-induced spin-orbit torque-based devices for magnetization switching commonly relied on the 4d and 5d heavy metals owing to their strong spin-orbit coupling (SOC) to produce large spin current via spin Hall effect (SHE). Here we present the sizable SHE in CrN, a light element-based system, and demonstrate the current-induced magnetization switching in the adjacent ferromagnetic layer [Co(0.35nm)/Pt(0.3nm)]3, which exhibits perpendicular magnetic anisotropy. We found the switching current density of 2.6MA/cm2.The first principles calculation gives the spin Hall conductivity (SHC) ∼ 120 S/cm due to intrinsic spin Berry curvature arising from SOC induced band splitting near Fermi energy. The theoretically calculated intrinsic SHC is close to the experimental SHC extracted from second harmonic Hall measurement. We estimated spin Hall angle (θSH) ∼0.09, demonstrating efficient charge-to-spin conversion in CrN system.

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Keyword: Light element, Spin-orbit torque

Date published: 2025-07-25

Publisher: American Physical Society (APS)

Journal:

  • Physical Review B (ISSN: 24699950) vol. 112 issue. 3 035166

Funding:

  • Japan Society for the Promotion of Science 23K22803
  • Tohoku University

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5763

First published URL: https://doi.org/10.1103/rzhb-6ytx

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Updated at: 2025-09-16 12:30:43 +0900

Published on MDR: 2025-09-16 12:19:40 +0900

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