Dmytro Demirskyi
;
Hossein Sepehri‐Amin
;
Oleg O. Vasylkiv
説明:
(abstract)The main objective of this investigation is the consolidation and flexural strength of alpha silicon carbide ceramics produced without additives by spark plasma sintering. Using the design of the experiment method, we optimized temperature and dwell to achieve fully dense silicon carbide bulks. The consolidation process of silicon carbide was analyzed similarly to the creep of bulk ceramics, and it was determined that the activation energy for the densification process was 596±39 kJ/mol, while the stress exponent n was below 2. Bulk additive-free silicon carbide ceramics gradually increased flexural strength as the temperature rose to 2000 °C. The flexural strength at 2000 °C was influenced by the loading rate, and under 2.5 mm/min, it reached a maximum of 2.08 GPa. To explain this phenomenon, a deformation mechanisms map was created, indicating that diffusion creep is the most probable mechanism for the strain sensitivity of SiC at 2000 °C. Transmission electron microscopy indicated a substantial rise in twin density within the ⍺-SiC grains at 2000 °C, indicating the activation of a previously unreported self-reinforcing mechanism.
権利情報:
キーワード: Polycrystalline ⍺-SiC, High temperature deformation, spark plasma sintering, microstructure
刊行年月日: 2024-10-22
出版者: Wiley
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4950
公開URL: https://doi.org/10.1111/ijac.14967
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-10-23 08:30:26 +0900
MDRでの公開時刻: 2025-10-23 08:18:20 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
ACT_9398_R1_main document Aug 27.pdf
application/pdf |
サイズ | 3.53MB | 詳細 |
| ファイル名 |
Supmat for ijac.14967.pdf
(サムネイル)
application/pdf |
サイズ | 933KB | 詳細 |