Article Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS2 Layers

Md Nasiruddin ; Zhipeng Wang ; Hiroki Waizumi ; Tsuyoshi Takaoka ; Yasuyuki Sainoo ; Atsushi Ando ; Ryuichi Arafune SAMURAI ORCID (National Institute for Materials Science) ; Mao Fukuyama ; Akihide Hibara ; Tadahiro Komeda

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Md Nasiruddin, Zhipeng Wang, Hiroki Waizumi, Tsuyoshi Takaoka, Yasuyuki Sainoo, Atsushi Ando, Ryuichi Arafune, Mao Fukuyama, Akihide Hibara, Tadahiro Komeda. Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS2 Layers. ACS Applied Nano Materials. 2023, 6 (16), 15175-15182. https://doi.org/10.1021/acsanm.3c02828

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(abstract)

A microfluid-assisted solution field-effect transistor (FET) with nano-
scale channels of atomically thin MoS2 layers was constructed. The source−drain
current (Id) vs gate voltage (Vg) characteristics (Id−Vg) were examined with a focus on
the threshold voltage (Vth) at the onset of the Id−Vg curve. Id−Vg changed when the
channel contacted the tetracyanoquinodimethane (TCNQ) and 2,3,5,6-tetrafluoro-
7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) solutions in isopropyl alcohol (IPA),
acetonitrile (ACN), and dimethyl sulfoxide (DMSO). The shift in Vth from the pure
solvent condition (ΔVth) increased monotonically with the concentration, which was
successfully simulated using Langmuir-type adsorption kinetics. We conclude that the
TCNQ and F4-TCNQ solutes were partially solvated by the solvent and adsorbed on the MoS2 channel. Simultaneously, the saturated ΔVth value revealed a significant difference between the TCNQ and F4-TCNQ solutes. The ratio of saturated ΔVth of F4-TCNQ compared to that of TCNQ showed a decrease of 4.2, 1.7, and 1.3 for IPA, ACN, and DMSO, respectively. These results coincided with the order of the dielectric constants of these solvents (18.0, 36.0, and 46.6, respectively). The solutes produced the Id−Vg curve by both charge transfer and the gating effect, the latter of which was screened by the presence of a solvent. This study demonstrates that a solution FET can be employed in solid–solution interface chemistry.

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Keyword: transition-metaldichalcogenidesfield-effecttransistor, TCNQ, solvation effect, dielectric constant

Date published: 2023-08-25

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Applied Nano Materials (ISSN: 25740970) vol. 6 issue. 16 p. 15175-15182

Funding:

  • Japan Society for the Promotion of Science 19H05621
  • Japan Society for the Promotion of Science 22H01886
  • National Institute for Materials Science JPMXP1222NM0034

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5829

First published URL: https://doi.org/10.1021/acsanm.3c02828

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Updated at: 2025-10-28 12:30:37 +0900

Published on MDR: 2025-10-28 12:16:26 +0900

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