Article Transition of topological Hall effect for tetragonal Heusler Mn2PtSn thin film

Satoshi Sugimoto SAMURAI ORCID (National Institute for Materials Science) ; Yukiko Takahashi SAMURAI ORCID (National Institute for Materials Science) ; Shinya Kasai SAMURAI ORCID (National Institute for Materials Science)

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Satoshi Sugimoto, Yukiko Takahashi, Shinya Kasai. Transition of topological Hall effect for tetragonal Heusler Mn2PtSn thin film. Applied Physics Express. 2021, 14 (10), 103003. https://doi.org/10.48505/nims.5370
SAMURAI

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(abstract)

A large topological Hall effect was observed in Mn2PtSn epitaxial thin films. The non-hysteretic topological Hall resistivity can be attributed to the canted spins below the reorientation temperature, while the hysteretic topological resistivity in the vicinity of the zero field captures the trend of antiskyrmion formation. A decrease in thickness enhances the contribution of dipolar interactions, leading to an additional antiskyrmion-type signal above the reorientation temperature. The amplitudes of these topological signals are strongly modulated by the film thickness, providing pathways for developing antiskyrmion-hosting media via film engineering.

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Keyword: Topological transport, Heusler compound

Date published: 2021-10-01

Publisher: IOP Publishing

Journal:

  • Applied Physics Express (ISSN: 18820786) vol. 14 issue. 10 103003

Funding:

  • Precursory Research for Embryonic Science and Technology JPMJPR18L3
  • Japan Society for the Promotion of Science JP17K18892

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5370

First published URL: https://doi.org/10.35848/1882-0786/ac223f

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Updated at: 2025-03-17 15:31:51 +0900

Published on MDR: 2025-03-26 17:25:56 +0900

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