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説明:

We report the study of electronic transport in graphene-mica vdW heterostructures. We have designed various graphene field-effect devices where mica is utilized as substrate and/or gate dielectric. When mica is used as a gate dielectric we observe a very strong positive gate voltage hysteresis of the resistance which persists in samples that were prepared in controlled atmosphere and even down to millikelvin temperatures. In a double-gated mica- graphene-hBN vdW heterostructure, we found that while a strong hysteresis occurred when mica is used as a substrate/gate dielectric, the same graphene sheet on mica substrate did no longer show hysteresis when the charge carrier density was tuned through a second gate with hBN dielectric.

権利情報:

• https://creativecommons.org/licenses/by/3.0/legalcode
  

キーワード: Graphene, mica substrate, hysteresis

刊行年月日: 2015-01-09

出版者: IOP Publishing

掲載誌:

• Nanotechnology (ISSN: 13616528) vol. 26 issue. 1 015202

研究助成金:

• EU Commission FP7 program MMM@HPC FP7-261594

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/0957-4484/26/1/015202

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更新時刻: 2025-02-27 08:30:29 +0900

MDRでの公開時刻: 2025-02-27 08:30:30 +0900