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説明:

A two-dimensional (2D) atomic crystalline transition metal dichalcogenides has shown immense features, aiming for future nanoelectronic devices comparable to conventional silicon (Si). 2D molybdenum ditelluride (MoTe2) has a small bandgap, appears close to that of Si and is more favorable than other typical 2D semiconductors. In this study, we demonstrate la-ser-induced p-type doping in a selective region of n-type semiconducting MoTe2 field effect tran-sistors (FET) with an advance in using the hexagonal boron nitride as passivation layer from protecting the structure phase change from laser doping. A single nanoflake MoTe2-based FET, exhibiting initially n-type and converted to p-type in clearly four-step doping, changing charge transport behavior in a selective surface region by laser doping. The device shows high electron mobility of about 23.4 cm2V-1s-1 in an intrinsic n-type channel and hole mobility of about 0.61 cm2V-1s-1 with a high on/off ratio which has measured the device in temperature dependence makes better understanding in a laser-doped channel. In addition, we measured the device as a complementary metal–oxide–semiconductor (CMOS) inverter by switching the charge-carrier polarity of the MoTe2 FET. This fabrication process of selective laser doping can potentially be used for larger-scale MoTe2 CMOS circuit applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Two-dimensional molybdenum ditelluride, laser-induced doping, field effect transistors

刊行年月日: 2023-05-22

出版者: MDPI AG

掲載誌:

• Nanomaterials (ISSN: 20794991) vol. 13 issue. 10 1700

研究助成金:

• National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) No. 2019R1A2C2088719
• National Research Foundation of Korea Grant funded by the Korean Government NRF-2021R1A2C2013378
• National Research Foundation of Korea Grant funded by the Korean Government NRF-2022M3H4A1A02085189

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3390/nano13101700

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更新時刻: 2025-02-26 16:30:16 +0900

MDRでの公開時刻: 2025-02-26 16:30:16 +0900