Download file (2.22MB)
Download as zip (2.13MB)

コレクション

引用

説明:

In this work, the interfacial structures and electronic properties of diamond and cubic boron nitride heterostructures are investigated using first principles calculation. It is found that the n-type (p-type) surface doping appears at the heterostructures with interface Csingle bondN (C—B) bonds, which is attributed to the interface charge transfer. The doping feature of heterostructures is determined by the interface bonds, and it is not related to the surface functionalization and crystal orientation. The areal electron (hole) density values are 6.57 × 1013 — 1.57 × 1014 cm−2 (2.24 × 1014 — 3.72 × 1014 cm−2). This work is helpful for promoting diamond applied in electronic and opto-electronic devices.

権利情報:

• In Copyright
  

キーワード: Diamond, First-principles calculation

刊行年月日: 2022-12-07

出版者: Elsevier BV

掲載誌:

• COMPUTATIONAL MATERIALS SCIENCE (ISSN: 18790801) vol. 218 p. 111947-111947

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4278

公開URL: https://doi.org/10.1016/j.commatsci.2022.111947

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-01-05 22:14:02 +0900

MDRでの公開時刻: 2023-12-06 13:30:45 +0900