The optical response of artificially twisted MoS$$_2$$ bilayers

M. Grzeszczyk; J. Szpakowski; A. O. Slobodeniuk; T. Kazimierczuk; M. Bhatnagar; T. Taniguchi; K. Watanabe; P. Kossacki; M. Potemski; A. Babiński; M. R. Molas

論文 The optical response of artificially twisted MoS$$_2$$ bilayers

M. Grzeszczyk ; J. Szpakowski ; A. O. Slobodeniuk ; T. Kazimierczuk ; M. Bhatnagar ; T. Taniguchi (National Institute for Materials Science) ; K. Watanabe (National Institute for Materials Science) ; P. Kossacki ; M. Potemski ; A. Babiński ; M. R. Molas

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M. Grzeszczyk, J. Szpakowski, A. O. Slobodeniuk, T. Kazimierczuk, M. Bhatnagar, T. Taniguchi, K. Watanabe, P. Kossacki, M. Potemski, A. Babiński, M. R. Molas. The optical response of artificially twisted MoS$$_2$$ bilayers. Scientific Reports. 2021, 11 (1), 17037.

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(abstract)

Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom – the interlayer twist. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS2 encapsulated in hexagonal BN with interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A1g-E12g energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62º) MoS2 BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS2 bilayers is also quantified.

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