T. Uto
;
B. Evrard
;
K. Watanabe
(National Institute for Materials Science)
;
T. Taniguchi
(National Institute for Materials Science)
;
M. Kroner
;
A. İmamoğlu
Description:
(abstract)Laser induced shift of atomic states due to the AC-Stark effect has played a central role in cold-atom physics and facilitated their emergence as analog quantum simulators. Here, we explore this phenomena in an atomically thin layer of semiconductor MoSe2, which we embedded in a heterostructure enabling charge tunability. Shining an intense pump laser with a small detuning from the material resonances, we generate a large population of virtual collective excitations, and achieve a regime where interactions with this background population is the leading contribution to the AC-Stark shift. Using this technique we study how itinerant charges modify – and dramatically enhance – the interactions between optical excitations. In particular, our experiments show that the interaction between attractive polarons could be more than an order of magnitude stronger than those between bare excitons.
Rights:
Keyword: AC-Stark effect, MoSe2 semiconductor, Attractive polarons
Date published: 2024-01-29
Publisher: American Physical Society (APS)
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI:
First published URL: https://doi.org/10.1103/physrevlett.132.056901
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Updated at: 2025-08-28 16:30:20 +0900
Published on MDR: 2025-08-28 16:19:50 +0900
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2024A00179G_AM_Lightshift_MoSe2.pdf
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2024A00179G_Lightshift_MoSe2_SM.pdf
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