T. Uto
;
B. Evrard
;
K. Watanabe
(National Institute for Materials Science)
;
T. Taniguchi
(National Institute for Materials Science)
;
M. Kroner
;
A. İmamoğlu
説明:
(abstract)Laser induced shift of atomic states due to the AC-Stark effect has played a central role in cold-atom physics and facilitated their emergence as analog quantum simulators. Here, we explore this phenomena in an atomically thin layer of semiconductor MoSe2, which we embedded in a heterostructure enabling charge tunability. Shining an intense pump laser with a small detuning from the material resonances, we generate a large population of virtual collective excitations, and achieve a regime where interactions with this background population is the leading contribution to the AC-Stark shift. Using this technique we study how itinerant charges modify – and dramatically enhance – the interactions between optical excitations. In particular, our experiments show that the interaction between attractive polarons could be more than an order of magnitude stronger than those between bare excitons.
権利情報:
© 2024 American Physical Society
キーワード: AC-Stark effect, MoSe2 semiconductor, Attractive polarons
刊行年月日: 2024-01-29
出版者: American Physical Society (APS)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI:
公開URL: https://doi.org/10.1103/physrevlett.132.056901
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-08-28 16:30:20 +0900
MDRでの公開時刻: 2025-08-28 16:19:50 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
2024A00179G_AM_Lightshift_MoSe2.pdf
(サムネイル)
application/pdf |
サイズ | 493KB | 詳細 |
| ファイル名 |
2024A00179G_Lightshift_MoSe2_SM.pdf
application/pdf |
サイズ | 439KB | 詳細 |