Article Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors

Xinzhi Wu (National Institute for Materials Science) ; Takao Mori SAMURAI ORCID (National Institute for Materials Science)

Collection

Citation
Xinzhi Wu, Takao Mori. Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors. The Innovation. 2025, 6 (2), 100891. https://doi.org/10.1016/j.xinn.2025.100891

Description:

(abstract)

Metals exhibit excellent ductility due to isotropic metallic bonding, enabling large-scale plastic deformation through dislocation motion. In contrast, inorganic semiconductors, typically bonded via covalent or ionic interactions, possess strong directional bonding that inhibits dislocation movement, rendering them brittle at room temperature. This fundamental distinction constrains the manufacturing processes of these materials, necessitating subtractive techniques such as cutting, grinding, etching. The ability to impart metal-like plasticity to inorganic semiconductors would significantly enhance their manufacturability and expand their applications in flexible electronics, wearable devices, and bio-integrated technologies.
Since 2018, a class of inorganic semiconductors, including Ag2S, Bi2Te, Mg3Bi2, etc., has been identified with room-temperature plasticity, presenting new opportunities for flexible semiconductor devices.

Rights:

Keyword: thermoelectric

Date published: 2025-04-03

Publisher: Elsevier BV

Journal:

  • The Innovation vol. 6 issue. 2 100891

Funding:

  • Japan Science and Technology Agency
  • JST-Mirai Program JPMJMI19A1

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1016/j.xinn.2025.100891

Related item:

Other identifier(s):

Contact agent:

Updated at: 2025-11-10 12:30:35 +0900

Published on MDR: 2025-11-10 12:24:34 +0900