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説明:

Metals exhibit excellent ductility due to isotropic metallic bonding, enabling large-scale plastic deformation through dislocation motion. In contrast, inorganic semiconductors, typically bonded via covalent or ionic interactions, possess strong directional bonding that inhibits dislocation movement, rendering them brittle at room temperature. This fundamental distinction constrains the manufacturing processes of these materials, necessitating subtractive techniques such as cutting, grinding, etching. The ability to impart metal-like plasticity to inorganic semiconductors would significantly enhance their manufacturability and expand their applications in flexible electronics, wearable devices, and bio-integrated technologies.
Since 2018, a class of inorganic semiconductors, including Ag2S, Bi2Te, Mg3Bi2, etc., has been identified with room-temperature plasticity, presenting new opportunities for flexible semiconductor devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: thermoelectric

刊行年月日: 2025-04-03

出版者: Elsevier BV

掲載誌:

• The Innovation vol. 6 issue. 2 100891

研究助成金:

• Japan Science and Technology Agency
• JST-Mirai Program JPMJMI19A1

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1016/j.xinn.2025.100891

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更新時刻: 2025-11-10 12:30:35 +0900

MDRでの公開時刻: 2025-11-10 12:24:34 +0900