Download file (449 KB)
Download as zip (405 KB)

Collection

Citation

Description:

Graphene-on-diamond (GOD) composite structure has been attracting considerable attention due
to the unique features for all carbon sp3-sp2 electronic applications. Whereby the electrical
properties of diamond surface can be purposely tailored and significantly altered through
transformed graphene layers. In this work, graphene-on-diamond composite structures were
prepared by nickel-catalyzed high-temperature rapid annealing, and were analyzed by Raman,
Hall effect measurement and Transmission electron microscopy (TEM). The results show that the
difference in surface conductivity of graphene-on-diamond composite structure is mainly related
to the number of transformed graphene layers, while the number of layers is mainly affected by
annealing time and the thickness of nickel film. Hall measurement and TEM results show that
when the transformed graphene becomes graphite with a lot of Ni atoms embedded into diamond,
the surface carriers of graphene-on-diamond composite structure are electrons. On the contrary,
when the transformed graphene is about 3 or 5 layers, the surface carriers are holes. These
findings may provide a route for graphene-on-diamond structure to become a strong candidate
for next generation complementary diamond electronic devices.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: diamond

Date published: 2023-10-18

Publisher: Elsevier BV

Journal:

• Science talks (ISSN: 27725693) vol. 8 100277

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1016/j.sctalk.2023.100277

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-02-27 12:30:14 +0900

Published on MDR: 2024-02-27 12:30:14 +0900