Download all files (6.54 MB)

Collection

Citation

Description:

Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance. We create an oxide interlayer that decouples the metal and semiconductor, while embedded gold nanoclusters in the interlayer act as conductive paths that facilitate efficient charge transport. Using these contacts, we fabricate a tungsten disulfide (WS2) photodiode with a photoresponsivity of 0.29 A W−1, linear dynamic range of 122 dB and power conversion efficiency of 9.9%. Our approach also provides a platform for probing photocarrier dynamics, and we find that contact recombination substantially affects photovoltaic performance. In addition, we illustrate the potential of using photodiodes with these conductive-bridge interlayer contacts as full-colour two- and three-dimensional imagers.

Rights:

• In Copyright
  

  This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41928-025-01339-9

Keyword: Two-dimensional semiconductor, Photodiode, Metal-semiconductor contact

Date published: 2025-02-05

Publisher: Springer Science and Business Media LLC

Journal:

• Nature Electronics (ISSN: 25201131) vol. 8 issue. 4 p. 298-308

Funding:

• Korea Institute of Science and Technology 2E32942
• Korea Institute of Science and Technology 2V10330-24-P039
• Korea Institute of Science and Technology 2E33423
• MSIP | Institute for Information and communications Technology Promotion 2020-0-00841
• MSIP | Institute for Information and communications Technology Promotion 2023-00258639
• National Research Foundation of Korea 2023R1A2C2003985
• National Research Foundation of Korea IBS-R026-D1
• National Research Foundation of Korea NRF-2017R1A5A1014862
• National Research Foundation of Korea IBS-R026-D1
• Korea Institute of Planning and Evaluation for Technology in Food, Agriculture, Forestry and Fisheries 421025043SB010
• Korea Creative Content Agency R2020040080
• MOSPA | Korean National Police Agency PR08-04-000-23

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1038/s41928-025-01339-9

Related item:

Other identifier(s):

Contact agent:

Updated at: 2026-07-28 13:42:00 +0900

Published on MDR: 2026-07-28 16:27:19 +0900