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Magnetic materials with high negative spin polarization have been sought as a building block to increase the design freedom and performance of spintronics devices. In this paper, we investigate negative spin polarization of Mn2VGa Heusler alloy in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. We fabricated an epitaxial CPP-GMR stack consisting of Mn2VGa/Ag/CoFe with L21 ordering in the Mn2VGa layer and observed negative magnetoresistance (MR), which provided evidence of negative spin polarization. The MR ratio depended on thermal treatments (deposition at an elevated temperature and post-annealing), because these processes affected the ordering, roughness, and magnetic properties of Mn2VGa. The maximum MR ratio reached −1.8% at room temperature and −3.0% at low temperature, representing the highest among the negative MR values in pseudo-spin-valve CPP-GMR devices despite the underestimation due to an incomplete antiparallel magnetization configuration. These findings demonstrate the potential of Mn2VGa for a material with high negative spin polarization.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Spintronics, Heusler alloys, Magnetoresistance, Magnetic recording, Magnetic material

Date published: 2024-05-28

Publisher: AIP Publishing

Journal:

• Journal of Applied Physics (ISSN: 00218979) vol. 135 issue. 20

Funding:

• Advanced Storage Research Consortium
• Japan Society for the Promotion of Science 21K20434
• Japan Society for the Promotion of Science 23K03934
• MEXT X-nics JPJ011438

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5188

First published URL: https://doi.org/10.1063/5.0207980

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Updated at: 2024-12-20 16:30:48 +0900

Published on MDR: 2024-12-20 16:30:48 +0900