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説明:

Magnetic materials with high negative spin polarization have been sought as a building block to increase the design freedom and performance of spintronics devices. In this paper, we investigate negative spin polarization of Mn2VGa Heusler alloy in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. We fabricated an epitaxial CPP-GMR stack consisting of Mn2VGa/Ag/CoFe with L21 ordering in the Mn2VGa layer and observed negative magnetoresistance (MR), which provided evidence of negative spin polarization. The MR ratio depended on thermal treatments (deposition at an elevated temperature and post-annealing), because these processes affected the ordering, roughness, and magnetic properties of Mn2VGa. The maximum MR ratio reached −1.8% at room temperature and −3.0% at low temperature, representing the highest among the negative MR values in pseudo-spin-valve CPP-GMR devices despite the underestimation due to an incomplete antiparallel magnetization configuration. These findings demonstrate the potential of Mn2VGa for a material with high negative spin polarization.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Spintronics, Heusler alloys, Magnetoresistance, Magnetic recording, Magnetic material

刊行年月日: 2024-05-28

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 135 issue. 20

研究助成金:

• Advanced Storage Research Consortium
• Japan Society for the Promotion of Science 21K20434
• Japan Society for the Promotion of Science 23K03934
• MEXT X-nics JPJ011438

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5188

公開URL: https://doi.org/10.1063/5.0207980

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更新時刻: 2024-12-20 16:30:48 +0900

MDRでの公開時刻: 2024-12-20 16:30:48 +0900